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Infineon Technologies (IPB038N12N3 G)
PartNo:
IPB038N12N3 G
Manufacturers:
Infineon Technologies
Qty:
2150
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Description:
MOSFET N-CH 120V 120A TO263-3
PDF:
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
HEXFETR
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs:
4.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 50μA
Gate Charge (Qg) @ Vgs:
31nC @ 10V
Input Capacitance (Ciss) @ Vds:
2380pF @ 10V
Power - Max:
3.6W
Mounting Type:
Surface Mount
Package / Case:
8-PowerTDFN
Supplier Device Package:
PQFN (5x6)
1N5822
Schottky Diodes & Rectifiers Vr/40V Io/3A BULK
X27.168
Accessories Automotive Gauge Stepper Motor - x27.168
FH12F-10S-0.5SH(55)
New and original,In stock
FH12F-14S-0.5SH(55)
New and original,In stock
FH12F-13S-0.5SH(55)
New and original,In stock
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